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Advance Technical Information
GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK160N30T IXFX160N30T
RDS(on) trr
TO-264 (IXFK)
VDSS ID25
= =
300V 160A 19m 200ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 300 300 20 30 160 440 40 3 20 1390 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W C C C C C Nm/lb.in. N/lb. g g
G = Gate S = Source (TAB) D = Drain TAB = Drain
G D
S
(TAB)
PLUS247 (IXFX)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 300 2.5 5.0 200 V V nA
Easy to Mount Space Savings High Power Density Applications DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications
50 A 3 mA 19 m
(c) 2009 IXYS CORPORATION, All rights reserved
DS100127(03/09)
IXFK160N30T IXFX160N30T
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 100 160 28 1770 125 37 38 105 25 335 123 56 0.09 S nF pF pF ns ns ns ns nC nC nC C/W C/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 (IXFK) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 80A, -di/dt = 100A/s VR = 75V, VGS = 0V 1.09 13 Characteristic Values Min. Typ. Max. 160 640 1.3 200 A A V ns C A
PLUS 247TM (IXFX) Outline
Note 1: Pulse Test, t 300s; Duty Cycle, d 2%.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
7,157,338B2
6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFK160N30T IXFX160N30T
Fig. 1. Output Characteristics @ 25C
160 140 120 6V VGS = 10V 7V 250 300 VGS = 10V 7V
Fig. 2. Extended Output Characteristics @ 25C
ID - Amperes
ID - Amperes
100 80 60 40 5.5V
200 6V 150 5.5V
100
50 20 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 0 2 4 6 8 10 12 14 16 18 20 5V
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ 125C
160 140 120 VGS = 10V 7V 6V 2.8 2.6 2.4
Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature
VGS = 10V
RDS(on) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 I D = 160A I D = 80A
ID - Amperes
100 80 5V 60 40 20
0.6 0 0 1 2 3 4 5 6 7 0.4 -50 -25 0 25 50 75 100 125 150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current
2.8 2.6 2.4 VGS = 10V TJ = 125C 180 160 140 120
Fig. 6. Maximum Drain Current vs. Case Temperature
RDS(on) - Normalized
2.2
ID - Amperes
TJ = 25C 0 40 80 120 160 200 240 280
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6
100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All rights reserved
IXFK160N30T IXFX160N30T
Fig. 7. Input Admittance
200 180 160 140 TJ = 125C 25C - 40C 250 300 TJ = - 40C
Fig. 8. Transconductance
g f s - Siemens
ID - Amperes
200
120 100 80 60 40 20 0 3.0 3.4 3.8 4.2
25C
150 125C 100
50
0 4.6 5.0 5.4 5.8 6.2 0 20 40 60 80 100 120 140 160 180 200
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
350 300 8 250 7 10 9 VDS = 150V I D = 80A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
VGS - Volts
TJ = 125C TJ = 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
200 150 100 50
6 5 4 3 2 1
0
0 0 50 100 150 200 250 300 350
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000 1,000
Fig. 12. Forward-Bias Safe Operating Area
f = 1 MHz Capacitance - PicoFarads
Ciss
RDS(on) Limit 25s
Coss 1,000
I D - Amperes
10,000
100
100s 10 TJ = 150C
Crss 100 0 5 10 15 20 25 30 35 40 1 1
TC = 25C Single Pulse
1ms
10
100
1000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_160N30T(9E)3-23-09
IXFK160N30T IXFX160N30T
Fig. 13. Maximum Transient Thermal Impedance
0.100
Z (th)JC - C / W
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All rights reserved
IXYS REF: F_160N30T(9E)3-23-09

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